smd type transistors 1 h fe classification marking kr kq kp hfe 90 180 135 270 200 400 features high collector to emitter voltage: v ceo -120v. www.kexin.com.cn absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -0.7 a collector current (pulse) *1 i c(pu) -1.2 a collector power dissipation p c 2w junction temperature t j 150 storage temperature t stg -55to+150 *1. pw 10ms,duty cycle 50% pnp silicon epitaxial transistor 2SB806 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -120v, i e =0 -100 na emitter cutoff current i ebo v eb =-5v,i c =0 -100 na v ce =-1v , i c = -100ma 90 200 400 v ce =-1v , i c = -5.0ma 45 200 collector-emitter saturation voltage * v ce(sat) i c = -500ma , i b = -50ma -0.4 -0.6 v base-emitter saturation voltage * v be(sat) i c = -500ma , i b = -50ma -0.9 -1.5 v base-emitter voltage * v be v ce =-10v , i c = -10ma -550 -620 -650 mv output capacitance c ob v cb = -10v , i e = 0 , f = 1.0mhz 14 pf transition frequency f t v ce = -10v , i e = 10ma 75 mhz *pw 350s,duty cycle 2% dc current gain * h fe
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